High Q-factor micro-cavity laser: Fabrication and lasing emission properties

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Fabrication of an integrated high-quality-factor (high-Q) optofluidic sensor by femtosecond laser micromachining.

We report on fabrication of a microtoroid resonator of a high-quality factor (i.e., Q-factor of ~3.24 × 10(6) measured under the critical coupling condition) integrated in a microfluidic channel using femtosecond laser three-dimensional (3D) micromachining. Coupling of light into and out of the microresonator has been realized with a fiber taper that is reliably assembled with the microtoroid. ...

متن کامل

Lasing on surface states in vertical-cavity surface-emission lasers.

We report experimental observation of lasing on surface states, in the form of standing waves at the termination of a defect-free photonic crystal on top of vertical-cavity surface-emission lasers. Direct images of lasing modes at the truncated periodic potential, along one side of a square lattice, are demonstrated by collecting near-field radiation patterns, as well as in numerical simulation...

متن کامل

Extended ultrahigh-Q-cavity diode laser.

We report on a study of a 698 nm extended cavity semiconductor laser with intracavity narrowband optical feedback from a whispering gallery mode resonator. This laser comprises an ultrahigh-Q (>10(10)) resonator supporting stimulated Rayleigh scattering, a diffraction grating wavelength preselector, and a reflective semiconductor amplifier. Single longitudinal mode lasing is characterized with ...

متن کامل

Polarization of lasing emission in microdisk laser diodes

TE polarization of optical emission from microdisk laser diodes of radius R55 mm, thickness L50.3 mm, is found to dominate both below and above room-temperature lasing threshold current, I th 52 mA. TE emission in the lasing mode at l51560 nm wavelength is due to higher optical gain for TE modes in the quantum well device. In our device geometry, the intrinsic whispering gallery resonances have...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Physics: Conference Series

سال: 2009

ISSN: 1742-6596

DOI: 10.1088/1742-6596/187/1/012012